Narrow Gap Semiconductors covers cover crystal growth/fabrication methods and studies, through physical phenomena, to device applications of narrow gap semiconductors, from basic to applied, as well as low energy excitations in other materials.

Spin-related phenomena

• Ferromagnetism in narrow gap semiconductors
• Growth, magnetic and transport studies of GaSb-based ferromagnetic semiconductors
• (Eu,Gd)Te ferromagnetic semiconductor layers - MBE growth, magnetic and structural characterization
• Electrical and magnetic characterization of impurity states in diluted magnetic semiconductors Pb1-xGexTe:Cr
• Omnidirectional spin lifetime enhancement for spin device applications
• Side-gate control of Rashba spin-orbit interaction in channels at narrow gap hetero-junctions
• Kinetic and zero electric field confinement and Rashba splitting in gated HgCdTe accumulation layers
• Spin splitting in Ga1-xAlxAs parabolic quantum wells controlled by electric field
• Anomalous spin splitting of shallow donor bound electrons in InAs-based heterostructures under electrical injection conditions
• Investigation of electron spin states in InGaAs/InAlAs and InGaSb/InAlSb heterostructures
• Weak anti-localization in Sn-doped InSb thin film layers on GaAs(100) substrates
• Determining the spin Hall conductance via charge current and noise

Growth, fabrication, characterization & theory

• InSb/InAs type II quantum structures for mid-IR laser applications
• Sb-based nanostructures for mid-IR applications
• Phonons in InGaAs/AlGaAs quantum dot superlattices: a Raman study
• Electronic Raman scattering in self-organized InAs quantum dot structures
• Selection-rule breaking of Raman scattering in InSb thin films grown on GaAs(001)
• Influence of growth conditions on optical and electrical properties of MOVPE-grown InAs1-xSbx
• InSb, InAs and In2O3 nanowires grown by vapour transport with aid of FIB Ga ions
• Electrical and optical properties of hydrogen-passivated GaSb
• Spectral study of persistent photoconductivity in InAs/A1Sb QW heterostructures
• Room-temperature electroluminescence of A1Sb/INAs1-xSbx quantum wells grown by MOVPE
• Application of quantum cascade lasers for cyclotron resonance measurements in InAsxSb1-x alloys
• Quantum transport in the accumulation layer at InSb/GaAs(100) hetero-interface
• Optical deformation potentials for PbSe and PbTe
• Deformation potentials of a semimetal; intersubband transitions in HgTe/HgCdTe superlattices
• Magnetic contribution to the specific heat of IV-VI semimagnetic semiconductors
• Peculiarities of conductivity of PbSnTe(In) in the persistent photoconductivity regime
• Oscillator parameters of PbTe
• Gallium-induced resonant states in Pb1-xSnxTe:Ga under pressure
• Electrical properties of n-layers of narrow gap semiconductors formed by low energy ion beam milling
• Pump-probe measurement of lifetime engineering in far-infrared SiGe quantum wells
• Intersubband transitions in GaP-AlP heterostructures for infrared applications
• Transport characteristics of In1-xGaxN films by MOVPE
• Influence of indium on the vibrational modes of dilute narrow band gap GaNAs alloys
• Variable range hopping transport in narrow-gap semiconducting partially filled skutterudites.
• Raman scattering study of the lattice dynamics of the narrow-gap semiconducting alkaline-earth disilicide
• Hall effect in the variable range hopping regime in CulnSe2

Carbon nanotubes

• Carbon nanotubes as narrow gap semiconducting materials
• Theory of the Aharonov-Bohm effect in carbon nanotubes
• Unconventional magnetotransport phenomena in individual carbon nanotubes
• Dynamic magnetic alignment of single-walled carbon nanotubes in megagauss fields
• Nano-space transport in crossed multi-walled carbon nanotubes
• Magneto-optical study of Aharonov-Bohm effect on second subbands in single-walled carbon nanotubes
• Pressure dependence of Raman modes in DWCNT filled with 1D nanocrystalline PbI2 semiconductor

IR & THz emitters

• Quantum cascade lasers: current technology and future goals
• Antimonide quantum cascade lasers for the 3-5 µm wavelength range
• Buried waveguide structures in THz quantum cascade lasers
• Fabry-Perot and distributed-feedback mid-infrared "W" diode lasers
• Mid-infrared emission from 100% spin-polarized states in IV-VI verticalcavity surface-emitting lasers
• Low threshold 2.37µm InGaAsSb/GaSb QW lasers: towards the ideal quantum well laser?
• Comparative study of AlGaAsSb/GaInAsSb multiple quantum wells lasers in the wavelength range between 2 and 3 µm
• Optimization of the indium and nitrogen concentration for long-wavelength emission of InxGa1-xAs1-yNy lasers
• Effects of strain and nonparabolicity on optical gain and threshold current in mid-IR InxGa1-xAsySb1-y /Al0.35Ga0.65As0.03Sb0.97 quantum well lasers
• Electroluminescence studies of laser heterostructures with InSb quantum dot active region
• Near infrared intersubband transitions in delta-doped InAs/AlSb multiquantum wells
• The temperature dependence of photoluminescence and IR photoconductivity in InGaAs/GaAs quantum dot heterostructures
• Parametric generation of mid IR radiation in GaAs/InGaAs/InGaP lasers and waveguides
• Terahertz radiation from InAs, InGaAs and InSb excited by femtosecond optical pulses at wavelengths of 800 and 1560 nm
• Stimulated emission of optically pumped CdxHg1-xTe films in the range 3 - 5 µm at 77 K

IR & THz detectors, electronic devices and mesoscopic structures

• Physics and applications of InAs/(GaIn)Sb short period superlattices
• Recent results on SOFRADIR HgCdTe detectors
• A superlattice infrared photodetector operating at room temperature in the 3-5 µm wavelength domain
• Study on an up-conversion quantum-well infrared photodetector integrated with a light-emitting diode
• Study on lifted-off quantum well infrared photodetector
• Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors
• Progress towards a mid-infrared single photon source
• Electron transport in InAs field effect and mesoscopic devices
• The quasi-rectangular quantum well for high electron mobility transistors (HEMT)
• Nanowire magnetic memory cell
• Measurements of magnetic domain-wall velocity detected by local Hall effect
• Mesoscopic spin-dependent ballistic transport in InSb- and InAs-based heterostructures
• SGM measurements on a disordered InGaAs QPC

Nonlinear dynamics and ultrafast phenomena

• Bloch oscillating super-superlattices
• Trembling motion of electrons in NGS
• Spin dynamics in dilute nitride semiconductors at room temperature
• Electron spin relaxation induced by nuclei in quantum dots in time resolved photoluminescence experiments
• Critical role of mobility in determination of spin relaxation in narrow gap semiconductor quantum wells
• Time resolved studies of magnetic and non-magnetic narrow-gap semiconductors
• Carrier population effects on polaron states in InAs-GaAs self-assembled quantum dots

Magneto-transport & magneto-optics

• Two-dimensional magnetoexcitons in the presence of spin-orbit interactions
• Magneto-spectroscopy of MIR quantum cascade lasers
• Electron-phonon interaction in quantum cascade structures probed by Landau level spectroscopy
• Photocurrents in InAs/AlGaSb quantum wells
• Electronic continuum states and mid-infrared absorption of InAs/GaAs quantum dots
• Spin-flip hopping between quantum dots of HgSe:Fe
• Spin-spin subband Landau-level coupling in InSb quantum wells
• Cyclotron resonance study of InAs/AlSb qantum well heterostructures
• Magnetospectroscopy of the double quantum well electron states
• Coherent magnetic breakdown in 2D hole system at p-GaAs/AlGaAs heterointerface under uniaxial compression
• Study of multicarrier transport in bulk HgCdTe using 15T pulsed magnetic fields
• Magneto-transport properties in AlxGa1-xAsySb1-y/InAs quantum wells

Index

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