Silicon Hetrostructure Handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications.

Features:

• Provides broad, comprehensive, in-depth, and authoritative coverage of the current state of the field
• Features a global "who's who" of expert contributors, each from a leading industrial or research organization from around the world
• Presents up-to-date research results, a comprehensive list of seminal references, and state-of-the-art devices and circuits
• Includes a foreword by Dr. Bernard S. Meyerson, nearly 1000 figures, and indispensable appendices

Contents

SiGe and Si Strained-Layer Epitaxy

• Overview: SiGe and Si Strained-Layer Epitaxy
• Strained SiGe and Si Epitaxy
• Si/SiGe(C) Eptiaxy by RTCVD
• MBE Growth Techniques
• UHV/CVD Growth Techniques; T.N. Adam
• Defects and Diffusion in SiGe and Strained Si
• Stability Constraints in SiGe Epitaxy
• Electronic Properties of Strained Si/SiGe and Si1-yCy Alloys
• Carbon Doping of SiGe
• Contact Metallization on Silicon-Germanium
• Selective Etching Techniques for SiGe/Si

Fabrication of SiGe HBT Bicmos Technology

• Overview: Fabrication of SiGe HBT BiCMOS Technology
• Device Structures and BiCMOS Integration
• SiGe HBTs on CMOS-Compatible SOI
• Passive Components
• Industry Examples at State-of-the-Art: IBM
• Industry Examples at State-of-the-Art: Jazz
• Industry Examples at State-of-the-Art: Hitachi
• Industry Examples at State-of-the-Art: Infineon
• Industry Examples at State-of-the-Art: IHP
• Industry Examples at State-of-the-Art: ST
• Industry Examples at State-of-the-Art: Texas Instruments
• Industry Examples at State-of-the-Art: Philips

SiGe Hbts

• Overview: SiGe HBTs
• Device Physics
• Second-Order Effects
• Low-Frequency Noise
• Broadband Noise
• Microscopic Noise Simulation
• Linearity
• pnp SiGe HBTs
• Temperature Effects
• Radiation Effects
• Reliability Issues
• Self-Heating and Thermal Effects
• Device-Level Simulation
• SiGe HBT Performance Limits

Heterostructure Fets

• Overview: Heterostructure FETs
• Biaxial Strained Si CMOS
• Uniaxial Stressed Si MOSFET
• SiGe-Channel HFETs
• Industry Examples at State-of-the-Art: Intel's 90 nm Logic Technologies

Other Heterostructure Devices

• Overview: Other Heterostructure Devices
• Resonant Tunneling Devices
• IMPATT Diodes
• Engineered Substrates for Electronic and Optoelectronic Systems
• Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy

Optoelectronic Compnents

• Overview: Optoelectronic Components
• Si-SiGe LEDs
• Near-Infrared Detectors
• Si-Based Photonic Transistors for Integrated Optoelectronics
• Si-SiGe Quantum Cascade Emitters

Measurement and Modeling

• Overview: Measurement and Modeling
• Best-Practice AC Measurement Techniques
• Industrial Application of TCAD for SiGe Development
• Compact Modeling of SiGe HBTs: HICUM
• Compact Modeling of SiGe HBTs: MEXTRAM
• CAD Tools and Design Kits
• Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs
• Transmission Lines on Si
• Improved De-Embedding Techniques

Circuits and Applications

• Overview: Circuits and Applications
• SiGe as an Enabler for Wireless Communications Systems
• LNA Optimization Strategies
• Linearization Techniques
• SiGe MMICs
• SiGe Millimeter-Wave ICs
• Wireless Building Blocks Using SiGe HBTs
• Direct Conversion Architectures for SiGe Radios
• RF MEMS Techniques in Si/SiGe
• Wideband Antennas on Silicon
• Packaging Issues for SiGe Circuits
• Industry Examples at State-of-the-Art: IBM
• Industry Examples at State-of-the-Art: Hitachi
• Industry Examples at State-of-the-Art: ST

Index

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